| PART |
Description |
Maker |
| FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
| APT17F100B APT17F100S |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns
N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
|
Microsemi Corporation
|
| STF5NK100Z STP5NK100Z W5NK100Z F5NK100Z P5NK100Z S |
N-channel 1000V - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESHPower MOSFET N沟道1000V - 2.7з - 3.5A TO-220/TO-220FP/TO-247齐保护SuperMESH⑩功率MOSFET
N-channel 1000V - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH⑩ Power MOSFET
N-channel 1000V - 2.7 - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 1000V - 2.7?/a> - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH?/a> Power MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STF3NK100Z STP3NK100Z STD3NK100Z |
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH?/a> Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
| STW8NB100 |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
|
SGS Thomson Microelectronics
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| IRFNG50 |
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
|
International Rectifier
|
| IRFPG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier
|
